1 2 10.2 0.2 1.3 0.2 8.9 0.3 0.8 0.1 5.0 0.5 1.4 0.2 4.5 0.2 0.5 0.2 0.4 0.1 pin 13.2 0.5 1.3 0.1 1 3 2 3 4 0.1 0.1 features low cost diffused junction low leakage low forward voltage drop high current capability and similar solvents mechanical data c a s e : j e d e c d 2 pak , m o l d ed p l a s t i c t e r m i n a l s : solderable per mil- std-202,method 208 p o l a r i t y : c o l o r b a nd d e n o t e s c a t h ode weight: 0.087 ounces,2.2 grams m o u n t i n g p o s i t i o n : a n y maximum ratings and electrical characteristics ratings at 25 ambient temperature unless otherwise specified. s i ng l e p h a s e , h a l f w a v e , 60 h z , r e s i s t i v e or i n du c t i v e lo a d. f or c a p a c i t i v e l oa d , d e r a t e by 2 0%. fr 10 20 b c fr 10 40 b c fr 10 60 b c u n i t s maximum recurrent peak reverse voltage v r r m v m a x i m u m r ms v o l t ag e v r m s v m a x i m um d c b l o c k i ng v o l t age v dc v m a x i m um a v e r a g e f o r w a r d r e c t i f i ed c u rr ent @t a = 7 5 peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @t j =125 maximum instantaneous forw ard voltage @ 5. 0 a v f v maximum reverse current @t a =25 at rated dc blocking voltage @t a =100 m a x i m u m r e v e rse r e c o v e ry t i m e ( n o t e1 ) t rr ns typical junction capacitance (note2) c j pf t y p i c al t he r m al r e s i s t a n c e ( n o t e 3 ) r ja <d operating junction temperature range t j storage temperature range t stg note:1. measured with i f =0.5a, i r =1a, i rr =0.25a. 25 0 v o l t a g e r a n g e : 10 0 - - - 6 00 v c u rr e n t : 1 0 a 1 0 0 200 300 400 600 fr 10 10 b c 10 a f a s t r e c o v e r y r e c t i f i e r s i f(av) the plastic material carries u/l recognition 94v-0 i r 1 0 0 1 0 150 1.3 70 140 210 280 420 a i fsm 3. thermal resistance f rom junction to ambient. a 2. measured at 1.0mhz and applied rev erse v oltage of 4.0v dc. - 5 5 ---- + 1 5 0 - 5 5 ---- + 1 5 0 3.0 1 5 0 28 f r 10 10 b c - - - f r 10 60 b c d 2 pak 100 200 300 400 600 easily cleaned with freon,alcohol,isopropanol dimensions in millimeters fr 1030 b c www.diode.kr diode semiconductor korea
- 1 . 0 a - 0 . 2 5 a 0 +0.5a t rr 1 c m pulse generator (note2) d.u.t. 1 n.1. 50 n.1. oscilloscope (note 1) (+) 50vdc (approx) (-) 10 n.1. (-) (+) 1 0 20 t j =125 8.3ms single half sine-wave 24 10 81 0 0 40 60 80 50 25 75 100 amperes peak forward surge current amperes amperes 2. rise time=10ns ma x. source impeda nce=5o set time base for 50/100 ns /cm fig.5 -- revers e recovery time characteristic and test circuit diagram number of cycles at 60 hz notes:1.rise time =7ns max. input impedance=1m .22pf fi g. 1 -- forward derati ng curve fi g. 2--peak forward surge current fi g. 4 --typi cal forward characteri sti c r e v e r s e v o l t a g e , v o l t s instantaneous forward current average forward rectified curren t i n s t a n t a n e o u s f o r w a r d v o l t a g e , v o l t s ambient temperature , fi g. 3--typi cal juncti on capaci tance fr 1010b c- - - fr 1060b c junction capacitance,pf 8 2 single phase half wave 60h z resistive or inductive load 25 0 0 50 4 6 10 12 16 14 1 0 075 1 2 5 1 7 51 5 0 t j =25 pulse width=300 s 0.04 0.01 0.02 0.06 0.1 0.2 0.4 10 2 1.0 4 100 .6 .8 1.0 1.2 1.4 1.6 1.8 2.0 .2 tj=25 f=1mhz 1 .1 2 4 .4 1 . 0 2 40 10 20 60 100 4 10 20 40 1 0 0 www.diode.kr diode semiconductor korea
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